During the review process, the expert group carefully listened to the project team's detailed report, carefully reviewed technical materials, and conducted in-depth discussions and analysis around key technologies. After independent scoring and comprehensive evaluation, a clear evaluation conclusion was finally formed.

Achievements of Silicon Carbide Resistance Furnace Project

In the "8-inch/12 inch Silicon Carbide Resistance Furnace and Process Complete Technology" project, Lianke Semiconductor, together with Zhejiang University and other units, has taken the lead in launching an innovative solution in the industry, which includes a DC dual power heater and a dual temperature zone thermal field structure. Compared to traditional equipment, the heating power of the system has been reduced by 35% to within 28kW; At the same time, high-precision control software was developed to achieve precise control of gas flow rate and pressure, effectively ensuring the stable growth of 8-inch/12 inch SiC single crystals.

The project has high technical difficulty and complexity, and has been promoted and applied in multiple silicon carbide substrate enterprises, bringing significant economic and social benefits. The single crystal thickness has reached over 5 cm. The expert group unanimously believes that the overall technical level of the project has reached the international leading level.

Results of 200mm zone furnace project

In the "200mm zone melting silicon single crystal furnace complete set technology" project, Lianke Semiconductor has created a new technology in which the lower spindle and sealing liner are driven by servo motors and synchronously coupled and controlled, and proposed a new idea for melting flow measurement and control based on a second camera, successfully overcoming key technical problems such as high-precision machining and assembly of the spindle.

Through key technological breakthroughs, prototype demonstrations, and industrial applications, the project has built a complete technological chain. At present, the technology has been successfully mass-produced and stably operated at the Semiconductor Silicon Materials Co., Ltd., with good technical reproducibility and maturity.

According to the evaluation of the expert group, the project has also been recognized as having reached the international leading level in overall technology.

Company Development and Prospects

Since its establishment, Lianke Semiconductor has always been committed to independent research and innovation of semiconductor equipment. Many achievements have reached the advanced level of the industry and have won the Tianyue Advanced First Excellent Supplier Award and SEMI Sustainable Development Outstanding Contribution Award.

Both technological achievements have been recognized as internationally leading, fully demonstrating Lianke Semiconductor's strong research and development capabilities in the field of high-end semiconductor equipment.

In the future, Lianke Semiconductor will continue to increase research and development investment, deepen technological innovation, actively assist in the localization process of semiconductor equipment, and contribute greater strength to promoting the high-quality development of China's semiconductor industry.