Gallium nitride is surpassing SiC?

Two types of semiconductors - silicon carbide and gallium nitride - are engaged in a fierce competition (without exaggeration) for circuits that can operate at the highest temperatures. Silicon carbide chips once held a leading position, with a working temperature of up to 600 ° C. However, gallium nitride, with its unique characteristics, performs better at high temperatures and has now surpassed silicon carbide. Researchers led by Rongming Chu, a professor of electrical engineering at Pennsylvania State University, have designed a gallium nitride chip that can operate at 800 ° C (enough to melt salt).

Winning the bid again! 7MW/28MWh！ Shanghai Electric Energy Storage won the bid for the second batch

In the wave of energy revolution, energy storage technology is becoming a key force in promoting sustainable energy development. Since winning the bid for the 10MW/40MWh vanadium flow energy storage project at the Fengxian Xinghuo Comprehensive New Energy Storage Technology Route Comparison Test Demonstration Base (Phase I) in May this year, Shanghai Electric Energy Storage Technology Co., Ltd. ("Electric Energy Storage") has recently won the bid for the second batch of 7MW/28MWh vanadium flow energy storage systems added to the project, providing further verification scenarios for Shanghai to build a diversified energy storage technology empirical platform.

The United States welcomes another 2nm wafer fab

According to industry insiders on the 31st, Samsung Electronics plans to deploy personnel from September to establish a contract manufacturing production line at the Taylor factory. Engineers will be deployed in two batches, in September and November respectively. In addition, it has been confirmed that the equipment required for the construction of the OEM production line is being ordered.